august2008.version1.0 magnachipsemiconductorltd . 1 mds1754C nchanneltrenchmosfet d g s absolutemaximumratings(t a =25 o unlessotherwisenoted) characteristics symbol rating unit drainsourcevoltage v dss 40 v gatesourcevoltage v gss 20 v continuousdraincurrent (note1) i d 7.6 a pulseddraincurrent i dm 50 a powerdissipation p d 2.5 w singlepulseavalancheenergy (note2) e as 18 mj junctionandstoragetemperaturerange t j ,t stg 55~+150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (note1) r ja 50 thermalresistance,junctiontocase r jc 25 o c/w mds1754 nchanneltrenchmosfet,40v,7.6a,29m generaldescription the mds1754 uses advanced magnachips trench mosfet technology to provided high performance in onstateresistance,switchingperformanceandreli ability. low r ds(on) , low gate charge can be offering superior benefitintheapplication. features v ds =40v i d =7.6(v gs =10v) r ds(on) <29m @v gs =10v <37m @v gs =4.5v applications inverters generalpurposeapplications 1(s) 2(s) 3(s) 4(g) 8(d) 7(d) 6(d) 5(d)
august2008.version1.0 magnachipsemiconductorltd . 2 mds1754C nchanneltrenchmosfet orderinginformation partnumber temp.range package packing rohsstatus MDS1754RH 55~150 o c soic8 tape&reel halogenfree electricalcharacteristics(tj=25 o cunlessotherwisenoted) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 40 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.0 1.8 3.0 v zerogatevoltagedraincurrent i dss v ds =32v,v gs =0v 1 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 a v gs =10v,i d =7.6a 22 29 drainsourceonresistance r ds(on) v gs =4.5v,i d =6.8a 28 37 m forwardtransconductance g fs v ds =10v,i d =7.6a 20 s dynamiccharacteristics totalgatecharge q g 9.2 gatesourcecharge q gs 1.7 gatedraincharge q gd v dd =28v,i d =7.6a,v gs =10v 2.2 nc inputcapacitance c iss 440 reversetransfercapacitance c rss 38 outputcapacitance c oss v ds =25v,v gs =0v,f=1.0mhz 76 pf turnondelaytime t d(on) 5.9 turnonrisetime t r 17.3 turnoffdelaytime t d(off) 16.5 turnofffalltime t f v gs =10v,v dd =20v,i d =1a, r gen =3.3 10.7 ns drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =7.6a,v gs =0v 0.88 1.2 v reverserecoverytime t rr 35 ns reverserecoverycharge q rr i s =7.6a,di/dt=100a/us 8.8 nc notes: 1.surfacemountedrf4boardwith2oz.copper. 2.startingt j =25 c,l=1mh,i as =6av dd =20v,v gs =10v
august2008.version1.0 magnachipsemiconductorltd . 3 mds1754C nchanneltrenchmosfet fig.1on regioncharacteristics fig.2on resistance variationwith draincurrentandgatevoltage fig.3on resistancevariationwith temperature fig.4on resistancevariationwith gatetosourcevoltage fig.5transfercharacteristics fig.6 body diode forward voltage variation with source current and temperature 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 4 8 12 16 20 v gs ,gatesourcevoltage[v] t a =125 25 55 notes: v ds =5v i d ,draincurrent[a] 50 25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 notes: 1.v gs =10v 2.i d =7.6a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 v gs =10v 4.5v 8v 4.0v 3.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 5 10 15 20 25 10 20 30 40 50 60 v gs =10v v gs =4.5v drainsourceonresistance[m ] i d ,draincurrent[a] 2 4 6 8 10 0 20 40 60 80 100 t a =25 t a =125 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0.4 0.6 0.8 1.0 1.2 1.4 10 0 10 1 t a =125 notes: v gs =0v 25 i dr ,reversedraincurrent[a] v sd ,sourcedrainvoltage[v]
august2008.version1.0 magnachipsemiconductorltd . 4 mds1754C nchanneltrenchmosfet 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 3 10s 1s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse r thja =125 /w t a =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig.10maximumdraincurrent v s.case temperature fig.11 transient thermalresponsecurve 0 2 4 6 8 10 12 0 2 4 6 8 10 v ds =28v note:i d =7.6a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 0 10 20 30 0.0 200.0p 400.0p 600.0p 800.0p c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[f] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 10 notes: r thja =50[ /w] i d ,draincurrent[a] t a ,casetemperature[ ] 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt a =p dm *z ja *r ja (t)+t a r ja =125 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ja (t),thermalresponse t 1 ,rectangularpulseduration[sec]
august2008.version1.0 magnachipsemiconductorltd . 5 mds1754C nchanneltrenchmosfet physicaldimensions 8leads,soic dimensionsareinmillimetersunlessotherwisespec ified
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